1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs
نویسندگان
چکیده
منابع مشابه
High-voltage field effect transistors with wide-bandgap -Ga2O3 nanomembranes
Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...
متن کاملDrain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs
A comparative study of the drain breakdown phenomena in junctionless (JL) and inversion mode (IM) pchannel MOSFETs has been investigated experimentally with different VGS, channel widths, and VSUB. In order to explain the dependence of drain breakdown voltages (BVDS) on VGS, 3-D device simulation has been also performed. When the device is turned ON, the BVDS is larger in JL than IM transistors...
متن کاملElectric and Magnetic Field Computation of 35 Kv Voltage Level of Transformer Substation 35/10 Kv Using the Cdegs Software
Paper presents electric and magnetic field computation of 35 kV voltage level of transformer substation 35/10 kV using CDEGS software. Based on well known theoretical considerations of electric and magnetic fields, a realistic simulation model of transformer station 35/10 kV was develop. All calculations are made for horizontal plane with height of 1,5 m above the soil changing coordinates alon...
متن کاملBreakdown Voltage of High-voltage GaN FETs
GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...
متن کاملBreakdown of Universal Mobility Curves in Sub-100-nm MOSFETs
We explore the breakdown of universal mobility behavior in sub-100-nm Si MOSFETs, using a novel three-dimensional (3-D) statistical simulation approach. In this approach, carrier trajectories in the bulk are treated via 3-D Brownian dynamics, while the carrier-interface roughness scattering is treated using a novel empirical model. Owing to the high efficiency of the transport kernel, effective...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2018
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2018.2859049